PART |
Description |
Maker |
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS AG Siemens Semiconductor Group
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ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极 25 Volt hyperabrupt varactor diode SHELL, DSUB, 25, 90, BLK, POY, S (1011898) SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 28 V, silicon hyperabrupt varactor diode SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
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HVD400C |
2.145 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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Integrated Device Technology, Inc.
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HVU363B |
Diodes>Variable Capacitance Variable Capacitance Diode for TV tuner
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Renesas Electronics Corporation
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HVU17 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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RKV651KL |
31.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for FM tuner IC
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Renesas Electronics Corporation
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AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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ADVANCED SEMICONDUCTOR INC
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BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
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Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
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V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
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GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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